Not usually.
Definitely helps for "logic level" types -- they're just normal FETs with Vgs(th) shifted down a bit, so driving one from 0...5V is much like driving a regular FET with 2...7V. More voltage swing means more current through internal resistances, and less time spent in the transition region.
SiC MOSFETs are typically suggested to drive something like -2 to 20V. SiC has lower gain than Si, hence the higher swing.
It is very useful for IGBTs, rarely specified on the datasheet but often required for reliable operation. Typically, +10 to +15V is used to turn on, and -5 to -10V to turn off. Very large modules are often driven with +/-15V.
Tim