Yes. It's kind-of shorthand for three transistors with the bases and emitters tied together; except, if you probed the real element in the IC, you'd find there is mutual (inverted*) hFE between the collectors, because it really is made as a multi-collector device.
So, the important characteristic -- which we can emulate with discrete transistors -- is the multiple mirrored currents, but there are more subtle properties which could be used (but I don't think are used here) that we would not be able to replicate with discrete transistors.
*Inverted, meaning, treating each collector in turn as an emitter, and testing the hFE to the other terminals as collectors (including the one labeled as emitter).
But actually it's better than that: this was old fashioned
lateral PNP, meaning, every PNP is essentially fabricated from NPN bases. So they are symmetrical (down to geometry, of course), have high Veb (because of course, Veb = Vce), and, because of the light doping and unfavorable geometry, have quite low hFE (typically 4-10).
That's also why I noted Q11 can boost the pull-down current, but not by much: low hFE. (Come to think of it, it could also be a parasitic structure around R9, which could be made as, essentially, a long base or emitter but given the values, it's probably intended for some function.
I've probably used a lot of terminology that doesn't mean anything without diagrams and explanations, so, do keep reading on the subject, should be able to find a lot that explains these old designs and fab methods.
If nothing else, keep asking.
Tim