On-Wafer CV Measurements

[fourierpwn]

Hi all,

I am wanting to do some on-wafer CV measurements. I have DC and GSG probes alongside a Keysight B1500A with MFCMU module (LCR meter module) installed. All of the documentation that I can find from Keysight makes use of an additional module; SCUU. This additional module is NOT essential, it simply converts the CV measurements from 4TP to 2TP (TP = terminal pair). For whatever reason, Keysight acknowledge that 4TP measurements are more accurate however they focus all of their documentation on the use of the SCUU and 2TP measurements.

Regardless, I am new to CV measurements and am a bit confused about how to do things. Ideally, I would like to do Ciss, Coss and Crss measurements though this is, currently, beyond me. I think starting with Cgg measurements would be my best bet. Cgg - drain, source, bulk are shorted together and go to HC + HP terminals and gate goes to LC + LP, is this correct?

My main concern is that the devices I am wanting to measure require GSG probes in order to eradicate self-oscillation, at least the larger devices do. By using GSG probes, I am unsure as to how one is to short D, S, and B together (B is not a problem as the devices have GSG/RF pads) or can I get away with using DC probes strictly for CV measurements?

As I said, I am new to CV measurements so there is every chance that I have missed something crucial. Thus, any help would be greatly appreciated.