A consequence you might not've thought of -- the parasitic transistors thus formed have hFE or alpha* to VCC and to adjacent input pins.
*alpha is the emitter to collector current ratio. If substrate is base, then an input pin is emitter, and VCC is collector. So it's actually that the input current is cascoded up to +V, at least in part.
Typically, GND side protection diodes involve the substrate, thus current ends up shared between many pins.
VCC side protection diodes are constructed in wells, so they can draw current between each other, and to substrate (GND). Typically, the inputs of a given gate (say, the inputs of a 74HC00 NAND) are made in the same well.
ESD structures appear to be particular to each gate, so that there is no sensible (Ic < 1nA) effect between gates (even for a hex inverter). I haven't tested, like, an 8-input NAND to see what hFE exists between all inputs (likely there is a pattern in the matrix, rather than equal values all around).
All these quirks are captured in my SPICE model here:
https://www.eevblog.com/forum/eda/spice-models/msg1327322/#msg1327322Some consequences you might not've thought of:
- Increased VDD current consumption (~proportional to clamp current).
Possible use case: low power RC oscillator potentially drawing up to 2x supply current.
- Leakage between inputs (typically VDD clamping only).
Possible use case: gated delay generator, where a small current charges a capacitor, which is sensed by a schmitt trigger NAND gate. Other input is strobed, using a differentiator (series cap, parallel resistor) to generate short pulses. Gotcha is, the differentiator causes ESD diode conduction during the 'reset' phase, which draws a gulp of charge through the other input pin, causing unintended crosstalk (injection locking, inconsistent timing).
Tim