The following are a few of the items that caught my eye in the WA List (Wasenaar Arrangement for export restriction and non proliferation) WA is like ITAR except even Russia (and 40 other countries) agree you shouldn't be allowed to own the following:
Presumably such items or close equivalents do exist:
1 - Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:
a. ADCs having any of the following:
1. A resolution of 8 bit or more, but less than 10 bit, with an output rate greater than 1 billion words per second;
2. A resolution of 10 bit or more, but less than 12 bit, with an output rate greater than 500 million words per second;
3. A resolution of 12 bit or more, but less than 14 bit, with an output rate greater than 200 million words per second;
4. A resolution of 14 bit or more, but less than 16 bit, with an output rate greater than 250 million words per second; or
5. A resolution of 16 bit or more with an output rate greater than 65 million words per second;
2 - Digital-to-Analogue Converters (DAC) having any of the following:
1. A resolution of 10 bit or more with an 'adjusted update rate of greater than 3,500 MSPS; or
2. A resolution of 12 bit or more with an 'adjusted update rate of greater than 1,250 MSPS and having any of the following:
a. A settling time less than 9 ns to 0.024% of full scale from a full scale step; or
b. A 'Spurious Free Dynamic Range' (SFDR) greater than 68 dBc (carrier) when synthesizing a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz;
3 - Field programmable logic devices (FPGA) having any of the following:
a. A maximum number of single-ended digital input/outputs of greater than 700; or
b. An 'aggregate one-way peak serial transceiver data rate' of 500 Gb/s or greater;
4 - Neural network integrated circuits;
5 - Custom integrated circuits for which the function is unknown, or the status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
a. More than 1,500 terminals;
b. A typical "basic gate propagation delay time" of less than 0.02 ns; or
c. An operating frequency exceeding 3 GHz;
6 - Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log 2 N)/20,480 ms,where N is the number of points;
7 - Direct Digital Synthesizer (DDS) integrated circuits having any of the following:
a. A Digital-to-Analogue Converter (DAC) clock frequency of 3.5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or
b. A DAC clock frequency of 1.25 GHz or more and a DAC resolution of 12 bit or more;
8 - Travelling Wave Tubes operating at frequencies exceeding 31.8 GHz;
- Tubes having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;
- Coupled cavity tubes, or derivatives thereof, with a "fractional bandwidth" of more than 7% or a peak power exceeding 2.5 kW;
- Helix tubes, or derivatives thereof, having any of the following:
a. An "instantaneous bandwidth" of more than one octave,and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5;
b. An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or
c. Being "space-qualified";
- Crossed-field amplifier tubes with a gain of more than 17 dB;
- Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm2;
9 - Microwave "Monolithic Integrated Circuits" and Discrete microwave transistors operating from 6GHz to 90GHz and delivering significant power.
10 - Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in Bc/Hz, less (better) than -(126 + 20log 10 F - 20log 10 f) anywhere within the range of 10 Hz ? F ? 10 kHz;
11 - "Frequency synthesizer" "electronic assemblies" having a "frequency switching time" as specified by any of the following:
a. Less than 156 ps;
b. Less than 100 ?s for any frequency change exceeding 1.6 GHz
within the synthesized frequency range exceeding 4.8 GHz but not exceeding 10.6 GHz;
c. Less than 250 ?s for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 10.6 GHz but not exceeding 31.8 GHz;
d. Less than 500 ?s for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 31.8 GHz but not exceeding 43.5 GHz;
e. Less than 1 ms for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 43.5 GHz but not exceeding 56 GHz;
f. Less than 1 ms for any frequency change exceeding 2.2 GHz within the synthesized frequency range exceeding 56 GHz but not exceeding 90 GHz; or
g. Less than 1 ms within the synthesized frequency range exceeding 90 GHz
12 - Acoustic wave devices as follows and specially designed components therefor:
1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:
a. A carrier frequency exceeding 6 GHz;
b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:
1. A 'frequency side-lobe rejection' exceeding 65 dB;
2. A product of the maximum delay time and the bandwidth (time in ?s and bandwidth in MHz) of more than 100;
3. A bandwidth greater than 250 MHz; or
4. A dispersive delay of more than 10 ?s; or
c. A carrier frequency of 1 GHz or less and having any of the following:
1. A product of the maximum delay time and the bandwidth (time in ?s and bandwidth in MHz) of more than 100;
2. A dispersive delay of more than 10 ?s; or
3. A 'frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz;
2. Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;
3. Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;
13 - Electronic devices and circuits containing components, manufactured from "superconductive" materials,
14 - High energy devices as follows:
1. 'Cells' as follows:
a. 'Primary cells' having an 'energy density' exceeding 550 Wh/kg at 20°C;
b. 'Secondary cells' having an 'energy density' exceeding 350 Wh/kg at 20°C;
High energy storage capacitors as follows:
a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:
1. A voltage rating equal to or more than 5 kV;
2. An energy density equal to or more than 250 J/kg; and
3. A total energy equal to or more than 25 kJ;
b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:
1. A voltage rating equal to or more than 5 kV;
2. An energy density equal to or more than 50 J/kg;
3. A total energy equal to or more than 100 J; and
4. A charge/discharge cycle life equal to or more than 10,000;
15 - Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1.0 second of arc;
16 - Digital data recorders having all of the following:
a. A sustained 'continuous throughput' of more than 6.4 Gbit/s to disk or solid-state drive memory; and
b. A processor that performs analysis of radio frequency signal data while it is being recorded;