Author Topic: MOSFET pull down in linear region  (Read 875 times)

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Offline matt111Topic starter

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MOSFET pull down in linear region
« on: January 17, 2018, 06:51:28 pm »
I have a current sense IC powered directly from a battery. I want the current sense IC to be in the shutdown state when the 3.3V power supply is disabled.

I have added a dual N channel MOSFET circuit (see attachments) to achieve a pull down on the shut down pin (active low and internally pulled high) when the
3.3V supply is not present. The circuit seems to work in LTspice but I am concerned about one of the MOSFETS operating in the linear region. (VDS < VGS - VT)

Is it safe to operate the MOSFET in this configuration or is there anything I'm missing that is considered bad design?
 

Offline Wimberleytech

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Re: MOSFET pull down in linear region
« Reply #1 on: January 17, 2018, 08:11:13 pm »
No, there is no issue with a MOSFET operating in the linear region.  It is perfectly fine.

You are driving the gate with 30 volts.  Make sure that the MOSFET you are using will support a VGS=30V

BTW, your notation about M2 says that it operates in Sat.  It appears to me that it too operates in the linear region...which is OK!

You may be a little confused about the terminology.  At a basic level, a MOSFET is either ON or OFF.  When OFF, there are no "regions" per say.  When it is ON, it can be in linear or saturation region. 
« Last Edit: January 17, 2018, 08:16:06 pm by Wimberleytech »
 

Offline Benta

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Re: MOSFET pull down in linear region
« Reply #2 on: January 17, 2018, 08:24:13 pm »
R1 and R2 are way too high. Check the datasheet for drain-source leakage current on your MOSFETs, you'll see what I mean.
 


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