David I had in mind the -GP version 1N4004GP which is Glass Passivated with 8pF junction capacitance, 5uA reverse current (at 100deg celcius at 400V peak reverse voltage)/(or just 20-50nA at 25deg celcius). Reverse recovery is 2usec though.
But maximum reverse current at room temperature is 5 microamps and reverse current is only weakly related to reverse voltage. The 8 picofarads of capacitance gets doubled with two diodes resulting in a total input capacitance high enough to present problems with probe compensation and bandwidth.
Why do you consider the 1N4148 as unsuitable? The worst case leakage current of 50uA is specified at 150 degrees celcius BUT at a more normal 25degrees it is in the region of 20-100nA depending on the (reverse) voltage.
20 nanoamps into 1 megohm is 20 millivolts and this leakage varies directly with temperature.
Worst case high temperature leakage current into the LT1102 inputs is about 2 nanoamps and leakage current at room temperature is more like 100 picoamps.
Or do you follow worst case specs because you can expect a sudden junction temperature increase during overvoltage events?
Leakage from junction temperature increases due to overload is actually a consideration for fast overload recovery.
It is worth mentioning where these relatively high absolute maximum leakage specifications come from. It is expensive to test for low leakage (tester time is charged per second) so a specification like 5uA or 20nA represents what the tester itself was capable of within the time allowed for testing. Where the LT1102 datasheet says +/-60pA maximum at 25C, +/-400pA maximum at 70C, and 15nA maximum at 125C, they are not kidding even though the typical specifications might be 10 times better. 2N3904 base-collector junctions are specified to be 50nA at 25C because of the test itself but are typically more like 10pA and better.
As a side note, no reasonably priced through-hole part can come close to the specs the BAV199 that you mentioned.
Dedicated low leakage diodes were never commonly available and technically the BAV199 does not count as low leakage either because it is only tested to be less than 5 nanoamps.
Manufacturers have used small signal transistor base-collector or base-emitter junctions as low leakage diodes for decades. Like the BAV199, they are not tested for low leakage either but demand was never high enough to manufacture a tested low leakage part at an economical price. The user has to qualify or test them themselves which is not difficult.
If you want an inexpensive already tested low leakage diode, then a 2N4117/2N4118/2N4119 low input bias current JFET (10pA at 25C maximum and 1pA typical) is the most economical choice and a lot of manufacturers use low leakage JFETs for exactly this purpose; just tie the drain and source together.
And here is another take with an INA111. With similar layout as the previous posts for the LT1102. But it works this time! I will recheck the importing of the LT1102 model..
That is weird; I was going to suggest that the SPICE was modeling the conductance of the 1N4004GP diode attenuating the input but obviously there is something wrong with the LT1102 model. At zero volts, diode conductance is about 26 mhos/amp. (1)
(1)
NIST's Guide for the Use of the International System of Units (SI) refers to the mho as an "unaccepted special name for an SI unit", and indicates that it should be strictly avoided. - Fuck you NIST. I no longer accept any of your advice since you approved deliberately compromised NSA algorithms and standards for cryptography. (2) You are not to be trusted with anything. You are as bad as the FDA. Die in a fire.
(2) Yea, this is just an excuse. I would use mho in place of siemen anyway. But NIST really is no longer to be trusted at least with anything having to do with cryptography and computer security. They can still die in a fire.