Hello there,
Take a look the schematic, I have observed this circuit in maximum and minimum temperature, the problems are
The gate of Q3 will be turned on at maximum temperature, while MAIN_PWR_EN is 0(disable).
1. D7 shows reverse diode current.
2. Q10 is also malfunctioning.
According to datasheet, torexsemi.com/file/xbs053v13r/XBS053V13R.pdf, the reverse current at 20V reverse volatge is 100u A. We are expecting a unidirectional current path towards R41 and R68 junction. Somehow in this circuit, current is producing,,,,
The parameters from datasheet of Q3 (onsemi.com/pub/Collateral/NTR2101P-D.PDF) says, if you calculate the gate current,Ig = Qg/(td(on)+tr); (Total Gate Charge) / (Turn-on delay time + rise time of MOSFET) it will about 0.37 A. (at VGS = ?4.5 V, VDD = ?4.0 V, ID = ?1.2 A, RG = 6.0 ohm) Reverse leakage might be temperature dependent, if you can see the circuit, a voltage difference between VIN(4.2v) and V_3V3 if Q3 is turned on that could make reverse path for diode conduction.