it seems to me this chip is aimed at very low power consumption devices.
and at 4$ per chip in a 10 lead MSop device it seems to be targeted for very small devices as well.
1mA of gate drive sounds like its enough but in practice i think we're looking at something that might be able to handle a 10 amp diode bridge but not much more without additional gimmicky to built a more robust gate drive.
i think you could make a bootstrap cap, diode, zenar, npn/pnp driver to assist this device that could drive an amp or five through a big Fet from just another mA or three of power dissipation, but my brain is mush right now.
assuming reasonable expenditure on diodes, you can get 100mv per 10 volts PIV rating reasonably cheap.
so for a 35 volt dc output from 24vac, we need 40 volt mosfets (i would run them that high, but many won't, so they will go for 50 volt fets)
at 10 amps dc current we go for 10mOhm fets at 1$ each. plus 4$ for the part and two square inches of board space.
that's 8$ to get from 10 watt of loss from standard silicon at 1 volt drop to 2 watts of loss.
or i can get some .35 volt drop schottky diodes and let them radiate the 7 watts of heat away at 100C, for 6$.
2$ increase to save 5 watts is tempting, but that's 40 cents per watt that could be spent elsewhere.
not a bad trade off really, but they could have integrated a bootstrap capacitor and made a larger, higher voltage device.