I'm trying to build TIA, to measure response to X-rays/Gamma rays from small PIN diode.
When gamma photons interact with the PIN diode, they generate electron-hole pairs in the semiconductor material. Each gamma-ray photon that hits the diode creates a pulse of current due to these generated charge carriers. So for better understanding, it would act just like normal photodiode interaction with visible light. The diode would be reverse biased to about 90V for electric field to accelerate the charge carriers. The diode in question would be BAR64-02EL.
So response will be pulse of current/charge, and to my research the pulse would have about couple nanoseconds rise time and decay tail up to 1 μs. The capacitance of this diode is closely related to depletion region width, so it would decrease while the region increases. So reverse biasing the diode will increase this width and decrease capacitance from ~0.2pF to ~0.1pF or less.
The max current amplitude of my pulse, according to my calculation would be around 0.2-1uA.
I hoped to use OPA857 to build TIA to investigate the pulses with oscilloscope with in line capacitor to isolate bias DC voltage from TIA.
I was hoping to use build in 20kΩ feedback resistor.
For capacitance value I calculated Cf = Cin / Rf
Cin - combination of Diode capacitance and amp input capacitance.
So Cf ~80fF so i figured 0.1pF Silicon RF Capacitor
Is designing/building TIA for so small pulses would be doable for a student, or would I need to consider many thinks designing PCB?
I've made some simple PCB's for couple projects, but don't know much about line impedances, isolation and such topics.
I would appreciate any comments and help if is it possible.
I’m an medical physics student from Poland, so my understanding of electronics and English can be sometimes lacking.