Just because they're cheaper?
Idunno. Custom silicon and ASICs are almost exclusively CMOS, because it's cheapest to produce and has sufficient performance. The main competitor I think is SiGe which also offers IC level integration, but is a bipolar process (at least, primarily so). You can find MOSFETs, MESFETs, JFETs and BJTs with cutoff frequencies up to 60GHz, using the various processes and semiconductor materials (from Si to SiGe, GaAs, InP and GaN).
There isn't terrifically much difference in the fundamental electrical characteristics of those devices. For sure, if nothing else, you can simply throw more transistors at it, to squeeze out more gain and bandwidth for less noise and distortion. A single transistor, on a test jig, used for a particular purpose (like a tuned or wideband RF amplifier) might have that concern, but most generally, it's not a problem.
I think the compound semiconductors (GaAs, et al.) are preferred for CMOS (or NMOS alone), because they are direct bandgap (i.e., forward bias emits light -- e.g., green LEDs are ordinary GaP diodes). So although there are all kinds of heterojunctions available in those materials, they aren't usually used for electrical effect. (The most important use of that is in laser diodes, where the population inversion is created with heterojunctions, and the optical resonator is formed using alternating layers which exhibit slightly different indices of refraction, and can therefore be made into partially or fully reflective surfaces at the characteristic wavelength.)
Tim