A diode from base to emitter is a common prophylaxis against reversing the base-emitter diode, for example during power-up.
Even if the collector-base breakdown voltage exceeds 50 V, the base-emitter diode breakdown is usually only 6 V or so, and if that diode breaks down it reduces performance of the surviving transistor.
Supposedly, one can "anneal" that damage by running large forward current through the base-emitter diode, but I have never tried that.