Hello All,
I'm looking at the R
DS(ON) spec of this MOSFET in the datasheet but it's specified a little different from what I'm used to see.
https://toshiba.semicon-storage.com/info/docget.jsp?did=12867&prodName=TK100E10N1Usually they give you the maximum R
DS(ON) @ 25ºC (3.4mOhm) and then a normalized graph over temperature, so you just pick the worst (max) value and multiply by the vertical axis value from the graph at the temperature you want to know.
This datasheet just gives the max R
DS(ON) @ 25ºC but then the graph over temperature is not normalized, the vertical axis is resistance. From the graph value at 25ºC we can see they are using the nominal R
DS(ON) at 25ºC (2.8mOhm). What do I do to get the worst value? Do I just shift up the graph by 0.6mOhm (3.4 - 2.8 )?
It's also "funny" that the graph is over T
a (ambient) and not T
j (junction)... Japanese "typo"?
Many thanks!