It's reasonable to make a digital switching circuit (of the conventional, common emitter topology) at up to fT/10 or so. That's ~30MHz for 2N3904s or 4401s and the like. You may have to run at quite high currents (and dissipations, at least in the loads; which may have to be current sources/sinks, rather than plain old resistors), in order to get the effective load impedance down, to drive the capacitances fast enough.
It's possible to get real power gain above fT (because fT only counts current gain, not voltage gain), but it's highly unlikely to get anything of use above maybe 2-3 * fT.
The physical mechanism that determines fT is how much resistance the base layer has (a wider, thinner base layer, with less perimeter connecting to the metal terminal, simply can't be charged and discharged quickly), and recombination time of the semiconductor (which is improved with stronger emitter doping, gold doping, etc.). Most BJTs are designed so that both effects cut in about the same place.
You can tell an RF transistor from some other datasheet parameters. Veb is lower (due to the higher B-E doping). Die photographs of them show much smaller, and more numerous, "fingers" (so, more perimeter to connect to; less base resistance).
Tim