I'm working on a project where I want to control the brightness of several LEDs to be proportional to a voltage. I realized that MOSFETs (well, FETs in general), when operated in saturation mode, act as a constant-current device that is proportional to the gate voltage, and since LED brightness is proportional to the current, I figure I've got a match!
Reading a bit, I found the PDF of a lecture on "
Transistor Basics - MOSFETs" by Bob York. In it, he says that if Vds ? Vgs-Vt and Vgs>Vt, then Id = Kn ( Vgs-Vt )^2 where Kn is a device property with the units A/V^2.
But what isn't clear is whether Kn is dependent on any other factors (such as temperature), and how much it varies between devices of the same family (since it's not called out on the datasheet for the little PMV20XN I'd like to use.)
So that's my question: does Kn depend on temperature, and if so how much? And does Kn vary between devices of the same part number, and if so how much?
The project I'm making doesn't have to be too precise, so even varying Kn by 10% or more would be okay. But if it varies by 2x between devices, or is similarly affected by temperature, then I'll need to finagle a way to include the current sensing in some kind of feedback loop.