Mosfet selection for motor PWM

[ZeroResistance]

So I have a task to control the speed of a 12V DC Brushed Motor by PWM.
The PWM frequency I am thinking of is 25Khz.

There are a variety of mosfets available with different "Total gate charge" values.
But then I also see a parameter called "Input Capacitance". Are both of these related?
From a PWM perspective would both have an impact on the switching speed of a mosfet?

Also how does one lock down on the turn on speed of the mosfet. Is 1uS considered a good place to start with?
I mean lets take a mosfet with "total gate charge" = 200nC that and a time to charge of 1uS so that would take a gate current of 0.2A
And my motor is rated at 5A, I'm planning to use a simple low side mosfet for the PWM ( no forward / reverse is involved here).

So considering the above aspects how does one calculate the switichng losses in the Mosfet @ 25Khz which is 40uS time period?
I guess he mosfet will be in the linear region for 2us out of 40us so that is 5% of the time.

[Zero999]

The input capacitance is is measured between the the gate and source and drain shorted together.

The total gate charge is the amount of charge which needs to flow into the gate to turn the MOSFET on. It's greater than what one would calculate using the input capacitance, because the gate to drain capacitance is increased due to the Miller effect, when the MOSFET starts to turn on.

See page 8 of the poper linked below:
https://www.infineon.com/dgdl/mosfet.pdf?fileId=5546d462533600a4015357444e913f4f

What are you using to drive the MOSFET?

The switching losses can be minimised by choosing a device with as lower gate charge as possible, whilst still having a high enough voltage rating an low enough on resistance to minimise the on loss. This isn't too difficult, just don't oversize the MOSFET too much and it will be fine.

[ZeroResistance]

The input capacitance is is measured between the the gate and source and drain shorted together.

The total gate charge is the amount of charge which needs to flow into the gate to turn the MOSFET on. It's greater than what one would calculate using the input capacitance, because the gate to drain capacitance is increased due to the Miller effect, when the MOSFET starts to turn on.

See page 8 of the poper linked below:
https://www.infineon.com/dgdl/mosfet.pdf?fileId=5546d462533600a4015357444e913f4f

What are you using to drive the MOSFET?

The switching losses can be minimised by choosing a device with as lower gate charge as possible, whilst still having a high enough voltage rating an low enough on resistance to minimise the on loss. This isn't too difficult, just don't oversize the MOSFET too much and it will be fine.

I'm planning to use a gate driver like MIC4422.
My question also was what value off turn on / off time is acceptable is 1us considered good enough then the driver needs to put in just 0.2A to charge the mosfet.

[Zero999]

The MOSFET is in its linear region when it's turning on and off, with the peak power dissipated when the MOSFET has half the power supply voltage across it.

Your MOSFET driver is overkill and there's no need to worry about it.

There are plenty of MOSFETs which will do this and have a much lower gate charge than 200nC. See some example data sheets linked below.
https://www.pololu.com/file/0J165/FDS5672.pdf
https://www.onsemi.com/pub/Collateral/NDPL070N10B-D.PDF
https://media.digikey.com/pdf/Data%20Sheets/ST%20Microelectronics%20PDFS/STD25NF10LT4.pdf