Um? It's not a foregone conclusion that C-B forward bias causes problems. There are situations where it might, and others (I suspect more common) where it doesn't matter. And still others where it can't happen at all (but OP asking about this condition probably implies we're not considering that case).
In and of itself, the transistor's limit, without reference to the surrounding circuit: it's right there in the screenshot, Vebo. The E-B junction has a lower breakdown voltage, typically acting something like a 7V zener diode. (Vebo is the voltage from emitter to base, the remaining terminal (collector) being "open".) Or in this case, potentially as low as 4V (note the limit is for guaranteed freedom from breakdown; the actual zener breakdown voltage might be 5-6V, I would guess).
The exact thing you asked for, Veco, isn't usually specified, but yes, the C-B junction will be forward biased under that condition. More importantly, transistor action will amplify the breakdown current, effectively lowering the breakdown voltage; by how much, isn't specified here. The forward version is (Vceo vs. Vcbo); and this is the explanation* why one is lower -- the C-B leakage forward-biases the B-E junction, multiplying the current, effectively causing breakdown to occur earlier, i.e. at a lower voltage.
*Probably there's a more refined explanation; alas, it's been long enough that I forget the intimate details of BJT operation, and whether this mode of operation has a weirder explanation, or if this really is the underlying mechanism. Anyway, as a hand-waving explanation, it's fine.
Tim