He didn't exactly say something different ...
He didn't say Schottky's suffer the effect (as far as I can see the negligible width of the Schottky barrier will prevent resistance modulation during forward conduction, aka forward recovery, just as much as it prevents reverse recovery).
He didn't say the overvoltage was large enough to overcome the inductive effects of a through hole component either.
Look at what he measured and compare it to the component the OP is using .... do you think something like a 750 mV overvoltage excursion would be relevant in a circuit with a 80 V MOSFET switch?
As I said, rarely relevant ... not never.