you need RL to be common ground? cause if you don't care, just place RL instead of the 1K from 12V and switch the ground. Elliminate the second transistor as well.
You can use any N-ch TO220 FET and drive it with 5V, but: if it's not a logic level (VGs(th)=1...3V) but instead a regular FET (VGs(th)=2...4V), then ant 5V it will not be fully ON, but in the linear region. So RDSon will be high and the FET gets hot plus the load doesn't get the full 12V because there's a voltage drop on the MOSFET.
So: - for low currents (~ couple hundreed mA) you can live with the MOSFET not being fully ON, so you can use any MOSFET that can handle let's say twice the current you want. There will be some heat dissipated, but probably not too much. If you have to use a heatsink at these low currents then you're probably doing it wrong.
- for high currents you have to use logic level MOESFETS that are fully ON at 5V, because the effect above will be much accentuated.
mind you:
A positivegate voltage (Vgs), higher than the gate threshold level (Vgs(th)) will create an n-type inversion channel under the gate oxide, connecting the source to the drain and allowing a current to flow. The gate threshold voltage is defined as the minimum gate bias required for creating the n-type inversion channel under the gate oxide.