Author Topic: LTSpice 1/f Noise Simulations  (Read 2361 times)

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Offline fourierpwnTopic starter

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LTSpice 1/f Noise Simulations
« on: March 03, 2017, 11:46:28 pm »
Hi again,

I am trying to simulate 1/f noise in LTSpice for any nMOS or pMOS device. There is a noise simulation example given on LT's website however that involves an op-amp and I am unsure as to how to run such a simulation for a MOSFET device.

Any help would be most appreciated  :)
 

Offline fourierpwnTopic starter

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Re: LTSpice 1/f Noise Simulations
« Reply #1 on: March 04, 2017, 02:07:44 am »
I thought I'd add some more information.

Here is the example of the noise analysis example given by LT.



Here is what I have done to translate this example over to a MOSFET.
Note: The biasing of the MOSFET (VDS=1V and VGS=1V) has been changed from 0-20V with no difference in the simulation output. I have tried several different MOSFET devices to ensure that I had a model that included noise parameters too.



Thoughts?
 

Offline basinstreetdesign

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Re: LTSpice 1/f Noise Simulations
« Reply #2 on: March 04, 2017, 02:56:12 am »
Well, the first thing that strikes me is that Vout is clamped to 1.000000000000 V by Vds.
Vds is mathematically noise-free so will exhibit none.
Try sticking a resistor between the drain and Vds.  1 Ohm will do and you may multiply the output voltage by whatever actual resistance you may be interested in.
Or you can monitor the drain noise current instead of its voltage. :popcorn:
STAND BACK!  I'm going to try SCIENCE!
 


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