Paralleling MOSFETs that are supposed to work in analog (controlled resistance) mode dosn't work as simple as done on that laser controller board, neither the small source resistors that Dave mentioned will work.
Actually, the way to go is to have a separate current sense amp for every individual transistor, driving its gate. If the threshold voltage of the individual FETs differs only slightly, one will end up with the transistorwith the lowest threshold taking almost all of the "punishment" while the others are virtually still blocked. For paralleling bipolar transistors, the distributed emitter resistance will work but then they are current and not voltage driven. Moreover, when using modern MOSFETs in analog high current/high dissipation mode, one has to make sure that the SOA of the device permits that kind of operation at all. Typical electronic load passbanks show how to do it.
Dave's note regarding ground referencing of the sense amps is also a little misleading, though he probably meant the correct thing: It's not important to reference the negative power supply rail of the sens amps closely to the current shunt negatives but rather the reference of the input signal to the current sense amps, i.e. the ground of the D/A converter or whatever means is used to set the current.
According to the circuitry, the laser doesn't appear to be operated in fast pulse mode. Considering this, it may be necessary to revice the thermal design of the passbank, especially if it's supposed to be operated in vacuum.
All the best with the project!
Cheers,
Thomas