EEVblog Electronics Community Forum
General => General Technical Chat => Topic started by: ferdieCX on June 15, 2018, 08:10:48 pm
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Hi, I have just measured some BF840 with the DMM, and it seems that they have an emitter-collector protection diode. In the data sheet there is no mention about an internal diode, so I am a little surprised.
They are SOT23 packages marked NCW, so they should be BF840 made in China for NXP-Philips.
Does anyone know about that ?
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I agree with blueskull; newer DMMs use a higher test voltage to support testing of blue LEDs and this might be enough to exceeded the 4 volt base-emitter breakdown voltage of the BF840. There is no way that transistor has a parallel collector-emitter diode.
Note that base-emitter (or collector-emitter) breakdown damages the transistors lowering hfe which may or may not matter in the intended application.
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Thank you very much for your answers. I have used a Fluke 179, and it puts out 7 V in the diode mode :palm:
I took 2 NEW transistors and repeated the measurement with a Simpson VOM that uses a 1.5 V battery.
In both transistors, the direct resistance base-emitter and base collector are both 20 ohms and the resistance between collector (-) and emitter (+) is 26 ohm
So, there must be another reason for this strange behavior :-//