If the MOSFET is being switched more often than about 1kHz, use a standard charge pump circuit to generate the high-level gate voltage with a high-side gate driver (e.g.
IR2117 datasheet). Such a circuit only needs about 12V for the gate bias, the level shifting is performed by the charge pump and gate driver.
If the MOSFET needs to be turned on continuously, with undefined off time, then you will need to either use a P-channel MOSFET (which can be switched by pulling the gate towards ground, assuming the source is positive and the Vgsmax is not exceeded), or you need to use a circuit to generate something like +10V above the input supply rail to saturate the N-channel MOSFET. In most cases, unless on-resistance and solution space is critical, you will do better with a P-channel MOSFET as it is far simpler to drive.
You can't use a linear regulator to do what you want without some kind of charge pump somewhere to generate the high-side voltage (if you're using an N-FET).