Here is my latest (tutorial) project, a voltmeter with ±1mV Full Range, 100nV resolution on the last digit, “hardly any” voltage noise, “hardly any” bias current, and all made on veroboard.
I will be quantifying the voltage noise and current noise over the next few days; be patient!

The DVM module can only handle positive voltages. Since I want both positive and negative input voltages I have biased the DVM module input up to 1V. This 1V then means 1mV referred to input since the amplifier chain is calibrated to x1000 (including any gain error of the DVM module).




So let’s look at some technical stuff. Given that I want “hardly any” bias current, the last thing I need is leakage to the + input pin of the ADA4522. The – input pin is on pin 2, right next to the + input pin (number 3) but that is ok because the input offset is 5µV. But pin 4 is at -2.5V so I would potentially have 2.5/5µ = 500,000 times more leakage to the power pin than to the – input pin!
Sadly the excellent ADA4522 chip is not available in a nice 8 pin DIP. I got a SOIC8 package. My solution was to lift pin 4 and link it to pin 5. The pin 4 pad is just floating.

Now the solder used is not a modern no-clean type. It has to be 20+ years old, 60/40 tin/lead solder so I washed the chip as best I could with 99.9% pure IPA. Even so, the best I could achieved was 300pA leakage. The measurement method was simply to put 1M in parallel with 100nF across the input terminals and observe the change in reading between the short-circuited input and the 1M input. (The overall gain was set earlier.) The worst case datasheet value is 150pA, so I am not million miles away, but even so, it was a bit disappointing. Needless to say, a few extra bits (R6,R7, R8) soon took that bias current down to the required “hardly any” level.
Now you might call this a “bootstrap design process” in the sense that I used the partially built micro-voltmeter to measure its own components. Next up were the protection diodes.
The input is designed to work up to ±1mV. At this level the leakage in the diodes is essentially independent of the bias direction (forward or reverse bias).

Since I am looking for low leakage at the best price I used the BC550B’s that I had in stock. (The J113 is a n-channel JFET, and using a JFET as a low-leakage diode is an old (>35 years old) trick of the trade.) I should mention that the 1mV was obtained by using a 1M resistor into a 100R resistor, and driving the series chain from 10V.
Next up I will have to do some measurements, unless there are any burning questions that have to be answered.
[EDIT: the circuit has a significant design error. U4 (MCP6043) has a not-CS pin which has to be tied low. I have not updated this circuit as it is obsolete, the Mk 2 version being superior in terms of noise, TC, battery life, stability, … Mk 2 starts at post #45.]