Reading the specs of the PIC16F1619, what they call High Endurance Flash Memory (HEF) is actually separate from the main Flash memory (which is itself user-writable and could also be used to store user data, but doesn't have as much endurance.)
The HEF memory of this PIC is tiny (128 bytes).
Dunno if you have read the datasheet carefully or not. Endurance of both regular Flash and HEF is stated:
(see TABLE 35-5: MEMORY PROGRAMMING SPECIFICATIONS)
https://www.microchip.com/wwwproducts/en/PIC16F1619Program Flash Memory: Cell Endurance: 8K words, min. 10k erase/write cycles
HEF (High-Endurance Flash Cell) : 128 bytes, min. 100k erase/write cycles
So to sum it up: the HEF memory is a separate memory block, it's small (128 bytes only), and has a minimum number of write cycles ten times higher than program flash.
It's still in the order of ten times lower than regular EEPROM which is usually more like 1 million cycles minimum or more. Write times may also be longer than with EEPROM (TBC).
So are you losing anything compared to EEPROM: short story: yes. But it's cheaper. Power consumption may be lower too (TBC as well).