> Yes, I know the datasheet figure is a minimum guarantee for the specified operating conditions, and it could be greater. But by how much? 101, 1000?
Endurance and retention go hand in hand, temperature is their sister and statistics is their mother. The physical reason for ("lack" of) endurance is damage to the memory transistor's oxide through which electrons are "shot" during programming. The consequence is leakage, i.e. the memory cell tends to forget its state. and this gets worse by increasing temperature (exponentially).
Note, that the 100 cycle endurance is given for 20 years of retention at 55deg.C. This means roughly that if you subject the mcu to 100 erase/program cycles and then keep it 20 years at 55deg.C, the probability of failure is still low enough so that only a few devices will fail. Note, that these devices are used in products which are sold in millions, and nobody wants to see them starting to return in large volumes within several years.
Also note, that the EEPROM in the same chip has quoted 10k cycles endurance for 20y retention, and 100k for 1y retention (the latter even at elevated temperature to 85deg.C).
In other words, if you'll keep your device at room temperature and won't require retentions beyond a few days, 1000 cycles is absolutely OK and 10k cycles is probably fine, too.
JW