In my master courses on CMOS design, we typically used +/-20% as the absolute accuracy of transconductance at room temperature.
So if they designed for a 40k pull-up (or a weak CMOS transistor to Vdd with Id set at e.g. 82.5uA @ 3.3V), then take +/-20% => 66-99uA range=> 33-50k range. Take voltage and temperature tolerance as well, and I'm certain a 20k-80k range is not unthinkable.
The point is that matching on-chip is quite good. If you take 2 separately fabricated FETs, both set them to the exact same drain current (as FETs are transconductors), then you'll likely have quite a big tolerance in gate voltage needed.
However, if you fabricate these 2 FETs on the same chip, very closely together, and with the proper structure/layout to balance any gradients in the doping across x/y directions, then it is possible to make an extremely well matched transistor pair. Their absolute specs can still be all over the place. But if you want to make a long tail circuit, that's usually not that important at all.
The PhD's I spoke to that were fully into analog (RF) CMOS design often said that schematic/simulation was about 10% of their work investment, and 90% was getting to a good layout that will work well across PVT.
The "old fashioned" way to accomplish this is to characterize each FET individually and then pair well matched parts together. It still needs to be done for exotic use cases, but fortunately you can still buy matched (J)FETs and the like which are inside a single package for a very good reason.