Hello mayatt , yes i forgot the vdd.
When I am trying to write mathematcal equations for example for Vin=5V.
I need to make assumptions and to prove or desprove them.
I can assume for each transistor that its either in saturation active or cuttoff, so there are 9 options for this circuit.
what is the assumpion strategy you suggest me to analize this circuit by equations?
I was told to calculate the current of the base and compare it to full-on collector current divided by the minimum Beta spec for the transistor.
given the plot below how do I make this analysis based on math and datasheet.
https://www.onsemi.com/pdf/datasheet/p2n2222a-d.pdf
Don't worry too much about Beta, look at the Vbe change in each transistor Q1 and Q2 when the output is High and Low. For a 10X change in collector current then ∆Vbe with be ~60mV. Use classic bipolar relationship between Ic and Vbe, and define what Vsat is for Q2 which relates to what Vout low is.
You'll need to define what is High and Low on the output to solve, and you can solve for Vin in each state, High and Low output. The difference in Vin for these two states is the Schmidt Hysteresis which will be the ∆Vbe1 + ∆Ve where ∆Ve is the difference voltage across the emitter resistor.
The solution will likely be transcendental and require more assumptions and multiple irritations to home in on the solutions (use Netwon's method or simple geometrical convergence to help with numerical solutions.). Compare your analysis results with LTspice simulations.
The operation (Vout low) is when the input is ~ below Vbe1 + Ve, then Q2 is saturated since it's base current is ~(Vdd-Vbe-Ve)/R7, or ~4ma which flow thru emitter resistor R9. Q2's emitter current is ~ (Vdd-Vsat-Ve)/R8 or ~4.6ma which also flow thru R9 and thus Ve is ~ (4ma + 4.6ma)*20Ω or ~172mV. Iterate thru this multiple times until the results converge for Ve and solve for Vin.
For (Vout high) when Vin is above Vbe1 + Ve, then Q2 is off as it's base is pulled down to Vsat + Ve, where Ve is now just the emitter current from Q1 times R9 or {(Vdd -Vsat- Ve)/R7 }R9 or ~ 94mV. So ∆Ve is ~172-94mV or 78mV. Iterate thru this state a few times and now ∆Vin can be estimated as ∆Vbe1 + ∆Ve.
Here we've added a LTspice simulation showing the two states with ∆Ve and ∆Vin.
Anyway, hope this helps understand this circuit and how to approach an approximate analysis.
Best