Testing --
Oh, wouldn't you know it, the SBR20A200CT doesn't appreciate up to 800V and um, I think the transistor in here will do upwards of 30A short circuit? Probably survived a few hits, but with the ~100Hz repeat rate, that's still not very long.
Which explains why I wasn't seeing 100V across the diode, once I turned down the supply to a more reasonable 100V.

Fortunately there are two diodes in one package, eh?
Forward bias 5A for 200ns, at 25°C:

10A

20A

That's -5A/div, so the trough is forward bias.
0. Ringing
This seems to be ringing more than usual, not sure why. There are three "rings" of note:
N/A. The undershoot just after the trigger is due to dI/dt in the current sense resistor, that's normal.
a. There's also an odd kink on its way there, it's not a smooth drop. Gets worse at higher current.
b. When the transistor turns on, there's another overshoot, which I don't usually see.
c. When recovery is done, there's a huge ping (sharp recovery). This is fairly normal, but I do have an R+C in the circuit which usually deals with it...
Wonder if it has anything to do with capacitance? Which, they don't actually publish...yikes... Perhaps dV/dt activation? 5kV/us isn't very crazy, but they do have a limit of only 10kV/us. Also wonder now if I should've been watching the voltage too, maybe this thing has weird dynamic voltage drops?
Capacitance measures 1.1nF with the DMM, so, around a few volts. Probably a tiny fraction of that towards rated voltage (100-200pF?). Anyway,
1. Forward Recovery
Doesn't appear to have any forward recovery, at least of any significance compared to stray inductance in the jig (about 30nH?). High-speed diodes vary, but this is very typical of MOSFET body diodes for whatever reason.
2. Reverse Recovery
- Very little dependence on forward-bias time. Looks about the same for t_on from 40ns up (the lower limit of my jig).
- Likewise, no effect on cutoff sharpness. This is NOT a soft-recovery diode! Probably, plan on using ferrite beads with it.
t_on invariance is interesting. Injected charge takes time to diffuse into the junction, and for pulses in this regime (< 100ns, for most power diodes), the charge can have a nonuniform distribution. When reverse bias hits, the depletion zone rips open and all those charges get sucked out, where they hit the electrodes nonuniformly, determining circuit voltage and current. You can get a recovery pulse that is lumpy, and usually sharper at the end. This is the phenomenon behind the Grekhov or drift step recovery diode. At least one guy has [ab]used a common TV (damper) diode to deliver a 1kV, ~1ns pulse into 50Ω, using this effect. Some diodes are snappier than others; depends on the doping profile.
A lot of power diodes are intentionally quite poor at drift step recovery: a soft-recovery characteristic leads to more recovery loss, but the reduced EMI can easily be worth that much. (The snubber losses required to use a sharp-recovery diode, while meeting the same emissions level, might indeed be higher!)
- Recovery time does increase with current.
- The increase doesn't seem to have a threshold, at least in this current regime. Mind that my jig gets slower at higher currents -- dI/dt is not constant, so this isn't great data.
| If (A) | dI/dt (A/us) | t_rr (ns) | I_rr (A) |
| 5 | ~1000 | 25 | 11 |
| 10 | 500-1000 | 40 | 12 |
| 20 | 600 | 70 | 12 |
Tim