Author Topic: Driving P-Channel Mosfet  (Read 12030 times)

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Offline Simon

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Re: Driving P-Channel Mosfet
« Reply #25 on: June 29, 2020, 05:24:04 pm »
Yes that will be fine.
 

Offline girishvTopic starter

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Re: Driving P-Channel Mosfet
« Reply #26 on: July 14, 2020, 01:59:27 am »
Shrug, there's probably about as many logic-level as PMOS.

I suppose the widest option is regular NMOS + gate driver, a single (additional) component solution -- but a bit more expensive than a BJT or two.

Tim

I bought IRL6297SDPbF with VDSS 20V / VGS 12V± / RDS 5.3mΩ at 2.5V.

https://www.infineon.com/dgdl/irl6297sdpbf.pdf?fileId=5546d462533600a40153565ff22f2575

These are logic level. The current rating is way higher than requirement.
 

Offline magic

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Re: Driving P-Channel Mosfet
« Reply #27 on: July 14, 2020, 07:25:38 am »
That's normal, the current rating is the maximum current it can conduct without burning, which doesn't mean anyone sane will want to actually operate it at the edge of burning.

It's just an impractical marketing number, like maximum power dissipation at 25°C case temperature :-DD
 

Offline Simon

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Re: Driving P-Channel Mosfet
« Reply #28 on: July 14, 2020, 07:34:10 am »
Yes I do tire of MOSFET datasheets, whatever the Rdson is double it unless you need really high power in which case trawl through the datasheet until you find the real value at high temperature and hope it's a mere 1.6x the 25C value given on the headlines.

Current capacity is more like peak without rupturing the thing but does not take thermals into consideration which you need o calculate. Power dissipation as far as I am concerned is a magic number they pull out of their asses as it has no basis in reality, You need to carefully work out the total thermal impedance and the temperature rise whilst being realistic about your local ambient in the enclosure.
 

Offline T3sl4co1l

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Re: Driving P-Channel Mosfet
« Reply #29 on: July 14, 2020, 11:40:37 am »
Yes I do tire of MOSFET datasheets, whatever the Rdson is double it unless you need really high power in which case trawl through the datasheet until you find the real value at high temperature and hope it's a mere 1.6x the 25C value given on the headlines.

An FYI about that: low voltage MOSFETs (<= 20V or so) have flatter Rds(on) vs. temp.  If given the choice between 20 and 30V devices, and the 20V has enough headroom to safely operate -- take it!

Tim
Seven Transistor Labs, LLC
Electronic design, from concept to prototype.
Bringing a project to life?  Send me a message!
 
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Offline Simon

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Re: Driving P-Channel Mosfet
« Reply #30 on: July 14, 2020, 12:02:00 pm »
If only we could do that in automotive, reading the fine print of TVS diodes and with the only protection from a surge being to ride it out 50+V parts for 12V and 100+V parts for 24V
 

Offline girishvTopic starter

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Re: Driving P-Channel Mosfet
« Reply #31 on: July 15, 2020, 12:25:34 am »
Yes I do tire of MOSFET datasheets, whatever the Rdson is double it unless you need really high power in which case trawl through the datasheet until you find the real value at high temperature and hope it's a mere 1.6x the 25C value given on the headlines.


The datasheet says RDS(on) of IRL6297 @120OC is 1.3x when ID is 8.5A. The ID of current design is between 0.65A and 1.0A.
« Last Edit: July 15, 2020, 12:30:14 am by girishv »
 

Offline Simon

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Re: Driving P-Channel Mosfet
« Reply #32 on: July 15, 2020, 05:51:30 am »
with 1A I would not even worry.
 


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