Hello, that should work.
Some random considerations: keep in mind that while on high state, the gate
of the mosfet relies on the charge on Cboot capacitor, so you have
to switch the mosfet off periodically to replenish Cboot. The penalty
is an huge dissipation in the mosfet while Cboot discharges below gate
threshold voltage, tuning off slowly... unless the driver has some
undervoltage safety cut-off.
The time depends on Cboot value and the leackage of the gate/driver itself.
R1 doesnt help in this, you could use an higher value, it's not really needed,
but it keeps the gate to source just in case something goes wrong...
You should use a resistor in series to Dboot, to limit charge current.
If you plan to go fast, better use a fast recovery part for Dboot.
Put another high value resistor in parallel to D1, to make sure that
Vs goes to ground while the part is quiescent and the output is disconnected,
high voltages and high temperatures could increase the leackage trough
the mosfet preventing Vs from going to ground, and keeping Cboot
correctly charged.
Hope this helps, good luck!
Edit: about the values, the appnote you linked contains all
the details about the values you need. I didnt made any
calculations, but ballpark values could be:
Dboot UF4007,
Cboot 1uF electro in parallel to 100nF ceramic (but you could
try higher valued electrolitics, I didnt check if it's a problem
for the driver),
resistor in series to Cboot 10ohm,
R1 470k,
R2 10ohm,
Resistor in parallel to D1 100k 2W.