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High Speed Transimpedance Amplifier
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arivalagan13:
Dear all,
I'm reraising the thread for the design of high-speed transimpedance amplifier (TIA) with some updated information.
My requirement is to design a TIA for ToF-MS. I said the instrument uses MCP (Microchannel Plate) and I was not sure about the information about the current and quoted it to be in 1 - 5 pA range. But, I have some updates towards this as mentioned below.

Updates:
The ToF-MS does not use MCP. Instead, it uses ET - Secondary Electron Multiplier (SEM) model number AF880(part number 14880).
I'm attaching the datasheet of this part number with this as an attachment. Now that I've got the datasheet I wan to design TIA for this device.
My questions are:
1. How do I model this SEM electrically, particularly how do I find (or extract) the capacitance information so that I can calculate the capacitor values and design appropriate capacitor and resistor values?

2. How do I go about choosing the important parameters of the target opamp to be used in the design of TIA (I believe closed-loop bandwidth, stability, noise and slew rate parameters are important). How do I go and relate the SEM parameters and the opamp parameters?
Marco:
With that sensor you can't really use a transimpedance amplifier, because it's 50 Ohm matched. You don't really need one either, because of the 10^7 or more gain the pulses will be easily above the noise floor with a good RF amplifier. I mentioned a module based on TQP3M9036 in the other thread.

TIAs at high frequencies are for things like photodiodes, tiny devices right next to the TIA. Often even wirebonded.
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