Thanks graybeard for helping me understand InAS devices.
Your response triggers new questions.
PbS sensor sensitivity and dark resistance vary significantly with temperature.
Do InAs devices exhibit the same temperature dependance?
When reverse biased,
will the DC output level vary with temperature,
similar to PbS devices with a load resistor to a bias voltage?
Is InAs sensitivity similar to PbS sensitivity,
i.e. do InAs devices require about the same amplifier gain as a PbS device?
Are InAs devices always based on semiconductor junctions (therefore plarized)
or can they also be resistive (non polarized)?