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InAs infra red detectors - Any insights on how to interface to them?

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AndersJ:
I wish to learn how to interface to InAs infra red detectors.
Are they similar in functionality and performance to PbS devices?
Does anyone have experience and wish to share?

graybeard:
If it is a PN junction you can reverse bias it and treat it like a PiN detector into a trans impedance amp or as a photocell into a voltage amplifier.  The manufacturer should have a data sheet.

Because of the small band gap leakage currents will be high.  Instruments I have used that employ them use liquid nitrogen cooling to reduce thermal noise and leakage.

AndersJ:
Thanks graybeard for helping me understand InAS devices.
Your response triggers new questions.

PbS sensor sensitivity and dark resistance vary significantly with temperature.
Do InAs devices exhibit the same temperature dependance?

When reverse biased,
will the DC output level vary with temperature,
similar to PbS devices with a load resistor to a bias voltage?

Is InAs sensitivity similar to PbS sensitivity,
i.e. do InAs devices require about the same amplifier gain as a PbS device?

Are InAs devices always based on semiconductor junctions (therefore plarized)
or can they also be resistive (non polarized)?

AndersJ:
Bumping this thread, hoping for someone to jump in.

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