Hi,
To protect a MIPI-DSI interface, I’m considering using this TVS diode: PESD4USB3UTBS-Q ( datasheet:
https://assets.nexperia.com/documents/data-sheet/PESD4USB3UTBS-Q.pdf ).
It has a working voltage of 3.3V, but since it’s a snapback type, my understanding is as follows: once it reaches the breakdown voltage of 9V (typical), it snaps back to 3.5V (as indicated in Table 5, page 4). However, looking at Figure 5 (page 5), it seems that the voltage first drops to approximately 1.2V, and then, at the specified 5A current, it clamps to 3.3V.
What I am trying to figure out is:
1) Does the diode recover immediately after the ESD pulse ends, allowing the signal to resume normal operation? Or does it remain clamped, as I’ve experienced with a similar diode I used in a previous project (which I posted about here before)? What are the conditions to ensure it does not remain clamped?
2) How can I determine the specific conditions required for the diode to recover and allow the signal to return to its normal working voltage, without staying triggered? I am asking because for example, being used on a fast MIPI-DSI signal it might switch to high-level (1.2V to 1.8V) too fast hence not allowing enough time for the TVS to recover out of clamp mode).
3) Additionally, although the datasheet states that it is a unidirectional TVS diode, Table 5 (page 5) suggests it exhibits the same behavior for negative voltages, with identical voltage values. Could someone clarify this please?
Thank you as always
