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LNA circuit

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promach:
I am trying to simulate a LNA circuit from the book "Design of CMOS RF Integrated Circuits and Systems"

However, it is still not working. Any help ?





mosfet_018.lib


--- Code: ---* modified for use with LTSpice; DM 8/19/2008
*
* 0.18u CMOS process
*
* NMOS transistor model name: NM
* PMOS transistor model name: PM


*-----------------------------------------------------------------------
.subckt NM D G S B
+params: W=10u L=1u
M1 D G S B NM L={L} W={W} AS={1.1u*W} PS={2.2u+W} AD={1.1u*W} PD={2.2u+W}
.ends

* ----------------------------------------------------------------------
* NMOS transistor model
* ----------------------------------------------------------------------
.MODEL NM NMOS LEVEL=49
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format    : LTspice
* model     : MOS BSIM3v3
* ----------------------------------------------------------------------
*                        TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
+VERSION = 3.1            TNOM    = 27             TOX     = 4.1E-9
+XJ      = 1E-7           NCH     = 2.3549E17      VTH0    = 0.354505
+K1      = 0.5733393      K2      = 3.177172E-3    K3      = 27.3563303
+K3B     = -10            W0      = 2.341477E-5    NLX     = 1.906617E-7
+DVT0W   = 0              DVT1W   = 0              DVT2W   = 0
+DVT0    = 1.6751718      DVT1    = 0.4282625      DVT2    = 0.036004
+U0      = 327.3736992    UA      = -4.52726E-11   UB      = 4.46532E-19
+UC      = -4.74051E-11   VSAT    = 8.785346E4     A0      = 1.6897405
+AGS     = 0.2908676      B0      = -8.224961E-9   B1      = -1E-7
+KETA    = 0.021238       A1      = 8.00349E-4     A2      = 1
+RDSW    = 105            PRWG    = 0.5            PRWB    = -0.2
+WR      = 1              WINT    = 5e-9              LINT    = 2.351737E-8
+DWG     = 1.610448E-9
+DWB     = -5.108595E-9   VOFF    = -0.0652968     NFACTOR = 2.4901845
+CIT     = 0              CDSC    = 2.4E-4         CDSCD   = 0
+CDSCB   = 0              ETA0    = 0.0231564      ETAB    = -0.058499
+DSUB    = 0.9467118      PCLM    = 0.8512348      PDIBLC1 = 0.0929526
+PDIBLC2 = 0.01           PDIBLCB = -0.1           DROUT   = 0.5224026
+PSCBE1  = 7.979323E10    PSCBE2  = 1.522921E-9    PVAG    = 0.01
+DELTA   = 0.01           RSH     = 6.8            MOBMOD  = 1
+PRT     = 0              UTE     = -1.5           KT1     = -0.11
+KT1L    = 0              KT2     = 0.022          UA1     = 4.31E-9
+UB1     = -7.61E-18      UC1     = -5.6E-11       AT      = 3.3E4
+WL      = 0              WLN     = 1              WW      = 0
+WWN     = 1              WWL     = 0              LL      = 0
+LLN     = 1              LW      = 0              LWN     = 1
+LWL     = 0              CAPMOD  = 2              XPART   = 0.5
+CGDO    = 7.7E-10        CGSO    = 7.7E-10        CGBO    = 1E-12
+CJ      = 1.010083E-3    PB      = 0.7344298      MJ      = 0.3565066
+CJSW    = 2.441707E-10   PBSW    = 0.8005503      MJSW    = 0.1327842
+CJSWG   = 3.3E-10        PBSWG   = 0.8005503      MJSWG   = 0.1327842
+CF      = 0              PVTH0   = 1.307195E-3    PRDSW   = -5
+PK2     = -1.022757E-3   WKETA   = -4.466285E-4   LKETA   = -9.715157E-3
+PU0     = 12.2704847     PUA     = 4.421816E-11   PUB     = 0
+PVSAT   = 1.707461E3     PETA0   = 1E-4           PKETA   = 2.348777E-3     



*-----------------------------------------------------------------------
.subckt PM D G S B
+params: W=10u L=1u
M1 D G S B PM L={L} W={W} AS={1.1u*W} PS={2.2u+W} AD={1.1u*W} PD={2.2u+W}
.ends

* ----------------------------------------------------------------------
* PMOS transistor model
* ----------------------------------------------------------------------
.MODEL PM PMOS LEVEL=49
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format    : LTSPICE
* model     : MOS BSIM3v3
* ----------------------------------------------------------------------
*                        TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
+VERSION = 3.1            TNOM    = 27             TOX     = 4.1E-9
+XJ      = 1E-7           NCH     = 4.1589E17      VTH0    = -0.4120614
+K1      = 0.5590154      K2      = 0.0353896      K3      = 0
+K3B     = 7.3774572      W0      = 1E-6           NLX     = 1.103367E-7
+DVT0W   = 0              DVT1W   = 0              DVT2W   = 0
+DVT0    = 0.4301522      DVT1    = 0.2156888      DVT2    = 0.1
+U0      = 128.7704538    UA      = 1.908676E-9    UB      = 1.686179E-21
+UC      = -9.31329E-11   VSAT    = 1.658944E5     A0      = 1.6076505
+AGS     = 0.3740519      B0      = 1.711294E-6    B1      = 4.946873E-6
+KETA    = 0.0210951      A1      = 0.0244939      A2      = 1
+RDSW    = 127.0442882    PRWG    = 0.5            PRWB    = -0.5
+WR      = 1              WINT    = 5.928484E-10   LINT    = 3.468805E-8
+DWG     = -2.453074E-8
+DWB     = 6.408778E-9    VOFF    = -0.0974174     NFACTOR = 1.9740447
+CIT     = 0              CDSC    = 2.4E-4         CDSCD   = 0
+CDSCB   = 0              ETA0    = 0.1847491      ETAB    = -0.2531172
+DSUB    = 1.5            PCLM    = 4.8842961      PDIBLC1 = 0.0156227
+PDIBLC2 = 0.1            PDIBLCB = -1E-3          DROUT   = 0
+PSCBE1  = 1.733878E9     PSCBE2  = 5.002842E-10   PVAG    = 15
+DELTA   = 0.01           RSH     = 7.7            MOBMOD  = 1
+PRT     = 0              UTE     = -1.5           KT1     = -0.11
+KT1L    = 0              KT2     = 0.022          UA1     = 4.31E-9
+UB1     = -7.61E-18      UC1     = -5.6E-11       AT      = 3.3E4
+WL      = 0              WLN     = 1              WW      = 0
+WWN     = 1              WWL     = 0              LL      = 0
+LLN     = 1              LW      = 0              LWN     = 1
+LWL     = 0              CAPMOD  = 2              XPART   = 0.5
+CGDO    = 7.11E-10       CGSO    = 7.11E-10       CGBO    = 1E-12
+CJ      = 1.179334E-3    PB      = 0.8545261      MJ      = 0.4117753
+CJSW    = 2.215877E-10   PBSW    = 0.6162997      MJSW    = 0.2678074
+CJSWG   = 4.22E-10       PBSWG   = 0.6162997      MJSWG   = 0.2678074
+CF      = 0              PVTH0   = 2.283319E-3    PRDSW   = 5.6431992
+PK2     = 2.813503E-3    WKETA   = 2.438158E-3    LKETA   = -0.0116078
+PU0     = -2.2514581     PUA     = -7.62392E-11   PUB     = 4.502298E-24
+PVSAT   = -50            PETA0   = 1E-4           PKETA   = -1.047892E-4
* ----------------------------------------------------------------------


--- End code ---


duak:
I would start by changing the Vdd connection to Lbias to connect to a voltage source that does not saturate transistor M1.  The transistor data sheet should show a typical value.

promach:
See the following LNA circuit with positive gain.

However, I am bit concerned with the values of Cin and C3.

Their values seem to affect the gain a lot

duak:
Do the MOSFETs have part numbers or are they devices that are part of some ASIC?  Is Vdd the recomended voltage and quiescent current for these devices?  Is this going to be used in a practical circuit?

As a starting point I would set DC bias to be about half of Vdd.  This should cause M1 and M2 to have the same drain to source voltage and allow both to run in the linear region.  If Vbias is too high, M1 will try to conduct too much current, saturate and not operate in its linear region.  You may have to adjust Vbias to find the highest gain.  If this doesn't work, try increasing Vdd and repeat.

I would also set Cd and C3 to zero as they affect AC gain.  You can restore them after the DC operating conditions are properly set.  I expect C3 set to 10p is way too high for 2.4 GHz.

promach:
I have added series input impedance (Rs) and the shunt output load impedance (RL).

The LNA circuit still give negative gain.

Could anyone help ?


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