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Looking for a low noise amplifier (<1nV / rt. Hz)
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cat87:
I've come across some designs until now that might be what you need. Bust they don't come in a nice SO package.

There's this amp using the 2SK117,  claims 1.4 nv/sqrtHz @ 1kHz:
http://techlib.com/electronics/audioamps.html

Then there's Glenn's design:
http://www.glensstuff.com/ulnma/ulnma.htm

And the eevblog discussion thread on this one is:
https://www.eevblog.com/forum/projects/low-noise-amplifier/

For Glenn's design,  Rs still has some of those BFxxx Jfets in stock.

Hope these help.


Later edit:
Just remembered there's also a nice design in LT's application note 159. The design there is mainly for low frequency stuff but it can  go up to 1Mhz and more
 
Gerhard_dk4xp:

--- Quote from: jbb on November 14, 2018, 07:10:04 am ---
Yes, I'm looking at composite amplifier for (at least) the first go.  Future versions - if I decide to keep going - can go further afield.

... It is therefore essential to test the components prior to assembly: the input FET, some active components and the leakage current of some capacitors. Only a fraction of the components fulfils the requirements and can be used...

Decoded: "we spent ####ing ages binning components and most of them weren't good enough."

--- End quote ---

Exactly.  These here are the Id vs. Vgs plots for the IF3602. Don't expect them to be matched in the sense
we use that word. But at least you don't get opposite outliers in one can for €55 per piece. (Mouser)

<    https://www.flickr.com/photos/137684711@N07/37321004540/in/album-72157662535945536/lightbox/   >

You also get a few hundred pF input capacitance per transistor, so cascoding is definitely required for your MHz.
The ADA4898 does not share that problem. 1 MHz is easy.
In that FLICKR album are also measurements of some depletion FETs that can be used as a cascode without
gate voltage dividers. That eases bootstrapping the JFET's drain if required.

On Semi has some new JFETs that can replace the EOLed BF862.

I have not yet read this ETH article, but in JFETs Id and Vgs have opposite TCs, so there is an
operating point that has TC = 0, and one may get by with less oven ado.

If you don't want to count single electrons, you will probably have a low impedance shunt resistor,
so better go bipolar.   (A sub-nV/rtHz preamp fed from a 1K source is futile a priori.)

In the Mat-02, 03, 04 data sheets are also examples for multiple transistor pairs in front of
op27-ish op amps, but parallel op amps are probably more painless.

cheers, Gerhard
Marco:
If you can use a wideband transformer, you don't need FETs ... your source impedance will be very low. If your source impedance is very low you can use BJTs.
Marco:
BTW, has anyone ever made a low noise amplifier out of boost converter? I've never seen it, but it should be possible.
Echo88:
@Marco: Wouldnt the input noise be massively changed trough the inductor?
@Gerhard: Why do you use wet tantalums now? Too much leakage current/leakage current noise from the foil caps that you use?
Thanks for the paper jbb, very interesting!
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