Mr.B: That Vdd+0,6V does not say anything about where the internal clamp begins conducting some (serious) current. 0,6V is absolute maximum voltage across the clamp, at unspecified current which might damage the device, if over 0,6V + over Vdd (or 0,6V less than gnd).
I wouldn't recommend schottky clamp, because schottky diodes are notorious for bigger leakage than Si diodes. (But I am not sure about this when using small signal schottky).
So that is the reason, why to use external Si clamping and the separation resistance beteen ext and int clamping diodes. If the internal ones starts to open at 0,3V (as dannyf said), the external Si will fully open at around 0,7 (heavy current clamping). This is 0,4V difference voltage and if you want to let only (randomly selected number) 2mA to pass through int clamp, the required series separation resistor will be around 200 ohms. (or more). The resistance calculation is only very informative, but I think will be enough accurate to make the stuff bombproof.
timb, what is NM and what will not work? Did I miss something?