Here's an additional annotated LM358 die shot of a Texas Instruments LM358. It's actually the one I started working on (and got stuck) before I found Noopy's one.

The original version is below.

Credit: Mikhail Svarichevsky (Zeptobars)
Article title: Ti LM358 - dual general-purpose opamp : weekend die-shot
Article link:
https://zeptobars.com/en/read/TI-LM358-dual-general-purpose-opampHD version 4833 x 3579px link:
https://s.zeptobars.com/Ti-LM358-HD.jpgAnother die shot I got of the same die but from a different IC (but with same markings) is below. It's easy to trace lines on this one. It's provenance is unknown other than the Youtuber mentioned it's a LM358.

Source: Youtube video link below.
Source Title: Various Opamp Die Designs Used in Fake Parts
Note I didn't really want to include the whole YouTube in this post but the forum software does this automatically for YouTube links.
From the markings "LM358H 08" it appears that this is maybe a National Semiconductor die.
LM358H is National Semiconductors metal can version of the LM358.
The "08" part is National Semiconductors die date marking where "0"=2000 and "8" is the weeks of year coding where 8 = week 48 to 51.
https://web.archive.org/web/20241008014507/http://www.chipdocs.com/manufacturers/NSC.htmlNotably Texas Instruments (TI) didn't manufacture the metal can version from what I can see before 2000 and only introduced this with the introduction of the National Semiconductor (NS) equivalents in 2000 which mostly had the "N" suffix to distinguish them from TI versions. Notably the "N" suffix was left off the metal cans probably because of this. Judging from this die it seems the TI LMx58-N series were equivalent to the National Semiconductor LMx58 series because they used NS dies. Note TI took over NS in 2011 but still keeps the two lines.
https://www.alldatasheet.com/datasheet-pdf/view/545599/TI/LM158H.htmlThe only thing in my annotated die shot I'm not 100% about is the J1 Junction Field Effect Transistor in the schematic for the common bias. I think it's above the "LM358H" marking on the die as the connections are right. However there is no obvious visual junction between the two pads.
Looking at the HD die shot close up reveals a darken area just below the horizontal centre of the likely component that may be a buried junction but its odd it isn't centred.

It maybe something like the following picture with the region types reversed and with the gate being the the now P region above the substrate connected to Vee. Note National Semiconductor (according to the article by Ken Shirriff from which I sourced this picture) invented the ion implantation technique for this in 1974 but it seems a bit complex for this IC.

Credit: Ken Shirriff
Original Source:
https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiShlZSbpm6az5V4UQ8uNeEXbElJ4n3nZni6bFd_Zl7m6e_ma36thMgJ47SiU-tQVsrxKe2anmRBq_XmKqdrELRB6YtvCKD_QjtgudYiWD1OCfXE7pwQ8VpXYbqN3avpCQ2Tfn27kkcqKNG/w9999/transistor-structure-jfet.pngSource Article title: Silicon die analysis: inside an op amp with interesting "butterfly" transistors
Source Article link:
https://www.righto.com/2018/06/silicon-die-analysis-op-amp-with.htmlSource Article author: Ken Shirriff
What do you think? Did I get it right or is there more to this?
Cheers
Andy