Depends on mosfet. I used CSD18543Q3A (declared Rds(on) is 12mOhm at 4.5V typical), at 4V the measured Rds was 33mOhm (which agrees with the datasheet), so it starts conducting somewhere below 4V. It's a bit too high for my application as, ideally, I need mosfet to conduct at below ~2.5V. But I didn't find suitable mosfet with such low Vgs(th), and Vds > 30V (I need at least 50 for reliability reasons). So, I'd say this approach doesn't work for voltages below 4V (unless one finds a proper mosfet).
One caveat is that mosfets have to have quite low Rds(on). That's because the peak current into a capacitive load my simulation is 20A (3A average current into 10_000uF capacitor). Since FERD drop is only ~0.55V (I used FERD15S50), in order mosfet to "steal" current from the diode, it needs to have voltage drop below that of the diode (otherwise most of the current will go via the diode). This means that Rds should be << 0.55V/20A=0.027 Ohm. That's why I'm using 10mOhm fets.
PS for no particular reason I'm attaching a pic of my diy power supply's rectifier board with the rectifier module installed.