Yeah, Si goes up to 200V or so -- kinda crazy the lengths they've gone to, with field effect stuff and all that. I think 300V is even out there, but not very available? SiC takes over beyond there.
I haven't really figured out the difference, when recovery is worse than capacitance; most converters don't mind the capacitance on the main output, and the diodes are comparable to transistors so it's not grossly worse at least. For sure, recovery sucks in hard switching (CCM). So it's worth a try.
Schottky also seem to be poorly suited to snubbers, as they have higher Rs*Cp for the same ratings; and usually lower peak current rating (especially SiC, with quite high Rs and low peak ratings*). The flipside is, one must be careful of forward as well as reverse recovery, due to the pulsed operation. (For which, lossy snubbers usually have soft and slow recovery, so it doesn't matter; but this can make quasi-resonant or lossless snubbers a challenge.)
*Some datasheets show the extended range on the V-I graph, where the guard ring diode goes into conduction. This is why the tempco and Vf changes at high currents. SiC P-N drop is around 3V so you see the kink above this level or so. This can carry more current, but it has a smaller area than the schottky, so doesn't increase the surge current rating much; and note that the minority carriers thus generated, will cause significant recovery time. In other words, the schottky is nice and fast and, schottk-ey?, at nominal currents, but exhibits P-N recovery at high currents.
Tim