Electronics > Projects, Designs, and Technical Stuff
Switching mosfet in leaded package faster than 1000 A/µs ?
duak:
Marco, I couldn't access the link you were probably referring to. Is it the IEEE paper?
I did find this link to an app note on driving MOSFETs showing the effects of the intrinsic and parasitic reactances in a run of the mill SMPS supply using leaded parts: https://www.onsemi.com/pub/Collateral/AN-9005.pdf.pdf
I haven't designed with power MOSFETs since the 90's so superjunction and SiC parts are all new to me. More stuff to not have time to catch up on.
Miyuki:
SiC are another beast with their low threshold and sometimes insane internal Gate Resistance
How do you want to drive a gate with RG(int) 26 Ω :wtf: at any reasonable speed
Also choice of devices with kelvin lead is somewhat limited and sometimes way more expensive than alternative without it
And also just 600+V devices are available with kelvin lead, lower voltage ones have no one and SMT packages mostly have complicated cooling
Something as inductive coupled gate kick would be nice and can work mostly passive as it is self regulating by load current
Sadly I also have no access to IEEE papers, do they have any example solutions or is it just theoretical study ?
filssavi:
For general experimentation you can try using inductive kick or some sort of resonant network, however if you are serious about it (as in you want to integrate it in a product at some point in the future) I would avoid such hacks as any number of problems could lead to anything from loud bangs with plastic shrapnels to fireballs, as to push such currents for any length of time will require a very low impedance source.
Also take into account that as the mosfet get faster the gate gets weaker and weaker (especially for state of the art GaN devices) and your driving must be on point as even a mild over voltage leads to sudden death
I say this not to scare you, you must have a realistic expectation that doing that with to220 will be very hard
Marco:
--- Quote from: Miyuki on August 26, 2019, 02:55:10 pm ---Sadly I also have no access to IEEE papers
--- End quote ---
If you don't have strong moral convictions on the sanctity of copyrights most of their papers are available from our friendly neighbourhood Kazakhstani ...
langwadt:
--- Quote from: T3sl4co1l on August 24, 2019, 08:49:04 pm ---SMT components perform better (D2PAK has about half the stray inductance of TO-220)
--- End quote ---
how is that, just from mounting alone? isn't D2PAK just a TO-220 with a leg and tap chopped off?
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