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External flash chip – general data reading/writing/erasing principles?

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3dgeo:
Howdy,

I want to use W25N01GVZEIG external flash memory (for images and other data storage).
128KByte block is way too big so I will be switching to NOR flash, something like MX25L12835F.

I've never worked with external flash and I'm trying to grasp general concept on how data reading/writing/erasing works, so correct me if I'm wrong:

1.With NOR/NAND flash you can erase only by Blocks (32KByte with MX25L12835F, 128KByte with W25N01GVZEIG).
2.With NOR flash you can write by individual Byte.
3.With NAND flash you can only write by Block (128KByte with W25N01GVZEIG).
3.With NAND flash you can only write by Page (2KByte with W25N01GVZEIG), actually W25N01GVZEIG has 2KB buffer that can be writen by byte and after saved to any Page.
4.NOR/NAND can be writen only in erased cells (not on top of old data).

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