The International Rectifier IRF1404 shown here has the letter P in the second line, i.e. it is an IRF1404PbF (lead free). This version allows 202A, more than the original IRF1404 variant, which is only specified for a drain current of 162A. The IRF1404PbF allows up to 808A for short periods. The typical resistance for both variants is 4mΩ. The maximum reverse voltage is 40V. Up to 333W can be dissipated through the TO-220 package.
The marking is somewhat poor, but this seems to be common for the newer HEXFET MOSFETs in this package.
There are three holes in the surface of the package, which were obviously created when the mold compound was injected.
With its dimensions of 5,8mm x 4,2mm, the die is very large for a TO-220 package. In order to represent the low typical resistance, the source surface has been connected to the source pin with four thick bondwires.
The datasheet states that this is a seventh-generation HEXFET. Vertical stripes are visible on the surface of the source metallization, which result from the contacting of the individual MOSFET structures.
https://www.richis-lab.de/FET42.htm