Power Integrations Gate Drivers & SiC FETs

[H713]

According to their AN-1601, Power Integrations gate drivers (particularly the 1SC2060P) can be used for driving SiC FETs. Does anyone have experience (good, bad ugly) with using these gate drivers, particularly for driving arrays of SiC FETs? The total gate drive power of the 1SC2060P is particularly interesting to me, as is the 60A gate drive capability.

[ahbushnell]

According to their AN-1601, Power Integrations gate drivers (particularly the 1SC2060P) can be used for driving SiC FETs. Does anyone have experience (good, bad ugly) with using these gate drivers, particularly for driving arrays of SiC FETs? The total gate drive power of the 1SC2060P is particularly interesting to me, as is the 60A gate drive capability.

I have not used this but I have designed SiC and IGBT gate drives.  This is setup for IGBT's.  The off gage bias on SiC is typically -5V.  This unit is -10V which would be used on IGBT's. 

[Wolfram]

If you have a bit more info on the application it's easier to give good advice.

20 W gate drive power brings you into the hundreds of kilowatts at hundreds of kilohertz range when talking about SiC gate drive, is this what you are aiming for? The 60 A number is pretty acacemic, as most SiC devices will be limited by Rgint to a few tens of amps, and if you're talking bricks then they usually have more added gate resistance internally, further limiting the peak current to much less than this unless you're talking multimegawatt operation. 20 W at 20 V gate swing is a whole amp of current, so 20 microcoloumbs at 50 kHz, and a 500 A 1200 V brick is well below a tenth of this.

Personally I'd look at rolling your own gate driver, depending on the application requirements. A low isolation capacitance DC/DC for power, an isolated gate drive IC with sufficient isolation and CMTI specifications, and a BJT emitter follower buffer should give you similar performance at a fraction of the cost.