Gate drive: Why is "Active Miller Clamp" function only for IGBT's?

[Faringdon]

Page 10 of the following discusses the “Active miller clamp” function of this high side gate driver IC....

https://www.infineon.com/dgdl/Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6

Why does it only refer to IGBT’s as being benificiarys of the “Active miller clamp” function?

Also, which is better to prevent spurious Miller turn on of a SiC FET?.....
a)…Using a Bipolar gate drive
b)….Using a Unipolar FET drive and an  "Active Miller Clamp" function.
c)….Using a Unipolar FET drive and a PNP turn off circuit

[David Hess]

Why does it only refer to IGBT’s as being benificiarys of the “Active miller clamp” function?

Power MOSFETs are less likely to be used in a high voltage application where an active miller clamp is necessary, but it applies to power MOSFETs just as much.

Also, which is better to prevent spurious Miller turn on of a SiC FET?
a)…Using a Bipolar gate drive

The active clamp is necessary when there is an assumption that a series resistance is between the gate drive and the gate, like in your example.

c)….Using a Unipolar FET drive and a PNP turn off circuit

This is effectively identical to bipolar drive and it requires the same series resistance.