Hi everyone,
At work, we use (or should I say,
used to use) a Chroma 61503 AC source to run certain tests for AC-DC switchmode converters. It can do arbitrary waveform generation: AC, AC+DC, and DC.
Long story short: I was attempting to reform a capacitor in DC mode, and the Chroma went *bang*.
More detail: In effort to reform the bulk cap, I brought the voltage up slowly from 0 to 400V over the course of about an hour. (This was done with ~100K in series.) Then I shut off the source, and turned it back on a few seconds later without current limiting resistor

@400V DC and it
really did not like that. The capacitor's leakage current had dropped to a few uA, so I figured it was okay... (Perhaps the cap had discharged enough in that time period to effectively put a short across the Chroma output.) As the Chroma is typically a very robust unit, I am surprised short-circuit or current limiting allowed it to self-destruct.

Anyhoo...With my heart-pounding, I opened up the unit, which now smelled of "magic smoke". I identified that 4 out of 16 output transistors (4 sets of 4 in parallel) were blown to bits. It appears to be in some sort of bi-polar H-bridge configuration. Each set of 4 transistors is driven by its own gate drive transformer, which gives me hope that the failure is isolated to the one bank of transistors. (I hope.) The gate drive networks are also toast.
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The power MOSFETs are Hitachi/Renesas 2SK1517, TO-247, about year 2000 vintage, now obsolete.
http://pdf.datasheetcatalog.com/datasheet/HitachiSemiconductor/mXyzvssw.pdfThe datasheet does not have gate charge parameters, only capacitance, which I think was typical for the day. I've read it's hard to make 1 to 1 comparisons with capacitance (Ciss, Coss, Crss)...so I'm asking for some feedback. I also noticed that 2SK1517 has zener clamp diodes on the gate. I don't know much about gate drive transformer circuits, but am wondering if there's a higher likelihood of spikes that might damage the gate.
2SK1517 Basic Parameters:VDSmax: 450V
VGSmax: 30V
Id (peak): 80A
Vgs: 2V (min) - 3V (max)
RDS-ON: 0.25R (max)
Ciss: 3050pF
Coss: 940pF
Crss: 140pF
Trr (body diode): 120ns (typ)
So far, the closest "match" I can find is Vishay SiHG22N60EF. Although I design SMPS by day, I am not sure exactly the critical parameters for this topology.
Usually lower capacitance is okay, but then switching speed might be too fast...or something of the like.
Vishay SiHG22N60EF Basic Parameters:VDSmax: 600V
VGSmax: 30V
Id (peak): 46A
Vgs: 2V (min) - 4V (max)
RDS-ON: 0.182R (max)
Ciss: 1423pF
Coss: 73pF
Crss: 5pF
Trr (body diode): 113ns (typ)
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The gate drive MOSFETs are Hitachi/Renesas 2SK975, TO-92 (tall style), also obsolete:
https://alltransistors.com/pdfview.php?doc=2sk975.pdf&dire=_renesasThe closest I can find is Diodes/Zetex ZVN4306AV
Hitachi 2SK975 Basic Parameters:VDSmax: 60V
VGSmax: 20V
Vgs: 1V (min) - 2V (max)
RDS-ON: 0.40R (max) @ 10V
Ciss: 140pF
Coss: 70pF
Crss: 20pF
ZVN4306A Basic Parameters:VDSmax: 60V
VGSmax: 20V
Vgs: 1.3V (min) - 3V (max)
RDS-ON: 0.33R (max) @ 10V
Ciss: 350pF
Coss: 140pF
Crss: 30pF
The capacitance numbers are off a bit (for both power and gate drive MOSFETs). I'm wondering if anyone can give me a "feeling" about whether they might be okay as replacements.
Thanks a lot.
Tim