Is it? They have some in stock at Mouser... give or take the parenthesis-junk they have tacked onto there.
Sort by gate charge, it's really what matters. Uh, hmm, bizarre, Toshiba didn't even record that parameter...
Cies tends to be a poor representative of overall performance. The missing part is Cres, the cause of the gate voltage Miller plateau when switching (which I'd point to a figure for, but again, they don't rate charge on this thing..). The combination of Cies swinging ~10V, and Cres swinging ~100s V, defines total gate charge, and therefore speed at a given R_G.
It doesn't look too bad, as they rate switching time at R_G = 39Ω and it's still doing on the order of 200ns, about as fast as the device can switch anyway. (IGBTs are a hybrid MOS-BJT structure, with most of the current carried by the BJT; as a result, they have switching performance similar to BJTs, most importantly storage time and fall time are limited by semiconductor properties (doping and carrier lifetime) -- whereas for a MOSFET alone, it's defined by terminal capacitances and how hard you can drive the gate.)
RJH1CV7DPK shows EOL on Mouser, are you sure...you didn't mix up the two??
Another important property you will need to shop for, is using two in parallel. IGBTs in general, parallel about as well as BJTs, for the same reason -- which is to say, typically not well. You're looking for a positive tempco in Vce(sat), so that as one device heats up, it carries less current in saturation, putting more load on the other which then heats up as well, and they track. Most have a negative to flat tempco, so are difficult to parallel.
The RJH1CV7DPK definitely shows higher capacitance (ugh, why can't they use log-log capacitance plots), but shows similar switching speeds at modest R_G so it might not be a bad sub. Beware that current ratings are slightly lower; maybe it will be more prone to failure as a result.
IXDH20N120D1: pulsed current seems to be smaller, not sure how significant that might be in this application. Oh, it's probably just that it's measured at TC=90°C for some reason.
Nice that it has a short-circuit rating, but it doesn't have a FBSOA to fill out that picture, go figure.
Also no capacitance curves? Weird...
Doesn't show Vce(sat) vs. T, and the "Typ. output characteristics" for 25, 125°C look very similar, but notice the one has an expanded axis, so it's probably the case the tempco is positive.
Has a different package, but TO-247 is usually compatible with TO-3P -- good eye expanding your search this way.
Beware that the gate drive is usually toast, as the transistor fails as a three-way short, putting some hundreds of volts momentarily into that part of the circuit. The gate resistor, drive transistors, and perhaps neighboring logic, or aux supply, may need to be replaced as well. (Which, if that includes the micro itself, good luck with that.) If it's totally toast, good thing these aren't expensive or anything... well, give or take if this is a single hob or one of several on a stove, YMMV.
Tim