Q211 is uses as a low leakage diode. It does not absultely have to be a JFET. A low leakage diode would work as well. They just selected the 2N4117 because it is sopposed to be tested for low leakage. A different FET may not be tested as well. For a substitute one could consider the collector - base diode of the jmall BJT like 2N3904 or BC548.
For a curde test to see if the rest is OK one could also consider a PNP transistor instead of Q202: it should also operate the current soruce, just not very accurate.
From the datasheet the Idss of the 2N4117 is only -30-90μA and Igss -10pA compared to the J309's -2-25mA and 1nA. so I take your point about the part in this position having to be a low leakage part! Thank you for pointing it out. Makes sense given the tiny currents involved, especially on the high resistance ranges.
I do have a question though. You mention the base-collector junction specifically. The circuit board shorts the S and D pads as per circuit diagram with G opposite:
G
-----
S--D
If a BJT were substituted as you suggest, it would have to have B on one side and C + E on the other.
B
-----
C--E (or E--C)
If soldered in directly, both junctions would be in play so in this case, the E pin would presumably need bent up out of the way or cut off but either way disconnected leaving only the B-C junction in circuit? Also, am I right in thinking that B would connect to the G pad? My thinking is that for an NPN transistor the base connects to the P material, as does the gate for an N-channel FET?
So far, I have checked the datasheet for the 2N3904 and the SOT23 pinout has C at the top so might not be a suitable physical fit. I can't seem to find the BC548 in a SOT23 package but so will continue to search for something that might fit. You mention that another FET may not have been tested as well, but, in principle, is another N-Channel FET with similar Idss/Igss characteristics likely to be suitable?
It's strange that the voltage at the Drain of Q202 (pin 2) is exactly 0V, maybe something is still shorting it to AGND. Q203, Q204 and Q211 might be short, so if you remove Q211, it should work.
Q211 has been removed and confirmed leaky between G and S/D. However, unfortunately there is still no output from Q202.
In the BOM of the 34401A and the 34970A, there's definitely a 2N5461 required, as the 2N5460 has 1mA IDSS only.
The cutoff voltage should be maximum 4.5V, better 2V only, to be selected from the batch, otherwise the FET will not be able to operate properly in the 10MOhm and 100 MOhm range.
Frank
Thank you once again. Embarrassingly, I had noted down and subsequently incorrectly referred to Q202 throughout as an MMBF5460. Having just re-checked the BOM list after your last post, I now realise that it should, in fact, be an MMBF5461. The only explanation I can think of is that I had mis-read the 0 from the line below, besides my mind is very much distracted at the moment with caring for an elderly parent who has been in and out of hospital several times over the last few days. Whatever the case, this has led me down the the path of a part with a slightly different specification.
Unfortunately, I have the same problem with MMBF5461 as I had with MMBF5460 in that both show as no longer manufactured and I can't find the SMD package anywhere. It is available as a NOS TO-90 package, but again, the J176 is readily available.
So, the bottom line is that I now need to do my homework and find and order something suitable and low leakage in place of the 2N4117 and get a suitable substitute for the 2N5461.
Have you tried another range?
the new FET seems not to work properly, as its Gate voltage is too low, in conducting mode.
have you selected the FET somehow, for minimum 2..3mA for example?
this CC circuit might have a parasitic modus operandi, which will depend on the jFET characteristics. maybe you select your FETs for different pinch off and zero GS current
Are we talking about a paper based excecise, i.e. looking at datasheets, or some kind of testing?
If datasheets, then what parameters am I looking for?
The all seem to have a range for both Idss and Igss, e.g. the one I chose has Idss between -1.5mA to -20mA.
I anticipated that 2..3 mA would be covered within that 1.5-20mA range?
Does this involve some kind of testing to select a particular FET from the 10 that I received in the batch?
Probing loose SMD parts is particularly problematic as they tend to ping off in all directions never to be seen again....