Electronics > RF, Microwave, Ham Radio
AWR SPICE Models
tec5c:
Another AWR question here.
I need to model a few components to use in AWR - MA46H201 varactor diode (1056 package), and NE3511S02 HJ-FET.
I have managed to get the SPICE model for the varactor diode:
Though, I have no experience in order to implement this into AWR. I am familiar with 'Import Netlist' in AWR, though that requires a S2P file, SPICE/HSPICE file which this model is just from a PDF... This leads me to the HJ-FET.
The S parameter files are available on the manufacturers website. Though, there are several (9 in total) different S2P files for the one device. I understand that each one is for the device under differing operating conditions, though I don't quite understand how to make use of these within AWR... I have the S2P files imported into AWR, though if I am investigating the device's performance and am not sure of what the operating conditions are going to be, how do I know which of these S2P files I need to use? Am I missing something?
Any feedback is appreciated :)
rfeecs:
Looks like that diode model is just for a PN junction diode, the simple diode model, DIODE. You could use that and add the other extrinsic elements Cp, Ls, Rs in your schematic.
The NE3511S02 is pretty much the lowest noise production FET available for 12 GHz. It's designed for use at 2V, 10mA. That's where you are going to get optimum noise figure / associated gain. You are going to have to pick one S2p file and use it. I don't really see why you don't know what operating conditions you want to use.
How to use it? RTFM? :)
tec5c:
--- Quote from: rfeecs on May 30, 2016, 11:37:46 pm ---Looks like that diode model is just for a PN junction diode, the simple diode model, DIODE. You could use that and add the other extrinsic elements Cp, Ls, Rs in your schematic.
The NE3511S02 is pretty much the lowest noise production FET available for 12 GHz. It's designed for use at 2V, 10mA. That's where you are going to get optimum noise figure / associated gain. You are going to have to pick one S2p file and use it. I don't really see why you don't know what operating conditions you want to use.
How to use it? RTFM? :)
--- End quote ---
Thanks for the reply.
It seems that the volterra diode model would be more appropriate than the simple diode model, as the volterra allows for input into parameters of interest that the simple diode model doesn't.
The purpose of these models is for research into trade-offs that need to be considered for low-phase-noise performance of VCOs. While ideally you would use it at 2V, 10mA as you said, I still need to consider other operating conditions.
You're right though, I too don't see how I didn't know what operating conditions I require.... I blame the lack of food and sleep! :=\ |O
T3sl4co1l:
I have a netlist model (.CKT / .CIR?) handy for a different varactor; I could write the model for yours if you like.
Hmm, I don't have standard pricing for models, I should think about that...
Tim
rfeecs:
--- Quote from: tec5c on May 31, 2016, 12:13:33 am ---The purpose of these models is for research into trade-offs that need to be considered for low-phase-noise performance of VCOs.
--- End quote ---
First off, the S-parameters are going to tell you nothing about phase noise. They can only be used for small signal simulation.
My observation is that most low phase noise oscillators up to about 10 GHz use silicon bipolar transistors. As far as I know, this is because they have low 1/f noise. The phase noise is caused by 1/f noise that is up-converted by the oscillator to create close in phase noise.
At higher frequencies, HBTs or MESFETs or pHEMTs could be used. Your HJFET (another name for pHEMT) has great noise figure at 12GHz, but likely not great 1/f noise.
At any rate, to simulate phase noise, you need a non-linear model that includes flicker noise model parameters for your active device.
You might want to look at some examples of simulating oscillators and phase noise, like this one:
https://awrcorp.com/download/faq/english/examples/BJT_Oscillator.aspx
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